Large-Collection-Angle BF STEM Imaging of Compound Semiconductors

Compound Semiconductors

Stoichiometry and doping in large gap compound semiconductors

2014 Current theoretical models on self-compensation in large gap semiconductors assume that intrinsic stoichiometric defects dominate and explain electrical properties quite satisfactorily without any contribution from impurities. Some recent results show on the contrary that impurities are in fact dominant at least at room temperature. The paper, starting from one particular material (ZnTe), ...

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Estimation of Plaque Contents With Multi-Angle 3D Compound Imaging

This investigation exploits the potential of using multiple insonification angles in characterizing plaques in the carotid artery. Specifically, previous work h a s shown that certain plaque materials such as lipid exhibit a low degree of angle-dependence in the received echo signal while the signal varies much more with angle forfibrous tissues. system h a s been established with a 10 MHz focu...

Technology Roadmaps for Compound Semiconductors

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within t...